Design and analysis of 4H-SiC based planar junctionless FETs for sub-10nm regime

Simple item page
dc.contributor.advisorJagadesh Kumar, M.
dc.contributor.authorSingh, Jaspreet
dc.date.accessioned2023-07-20
dc.date.accessioned2024-10-29T11:19:09Z
dc.date.issued2023
dc.identifier.urihttp://10.17.50.146:4000/handle/123456789/3619
dc.relation.ispartofseriesTH7286
dc.subjectUltra short channel length
dc.titleDesign and analysis of 4H-SiC based planar junctionless FETs for sub-10nm regime
dc.typeThesis

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
TH-7286.pdf
Size:
382.87 KB
Format:
Adobe Portable Document Format
Download

Collections

Department of Electrical Engineering