Design and simulation of trench gate power MOSFETs for switching and RF applications

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dc.contributor.advisorJagdesh Kumar, M
dc.contributor.authorSaxena, Raghvendra Sahai
dc.date.accessioned2012-05-30
dc.date.accessioned2024-10-29T11:16:11Z
dc.date.issued2010
dc.identifier.urihttp://10.17.50.146:4000/handle/123456789/3211
dc.relation.ispartofseriesTH4160
dc.subjectPower devices
dc.titleDesign and simulation of trench gate power MOSFETs for switching and RF applications
dc.typeThesis

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