Ultrafast photoinduced terahertz emission properties of bulk and few layer MOS2

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dc.contributor.authorNeetesh Dhakar
dc.date.accessioned2025-12-10T09:26:31Z
dc.date.issued2025-07-23
dc.identifier.urihttps://ir.iitd.ac.in/handle/123456789/7844
dc.language.isoen
dc.publisherIIT Delhi
dc.subjectTransition metal dichalcogenides
dc.subjectNATURAL SCIENCES::Chemistry::Physical chemistry::Spectroscopy
dc.subjectQuantum computing
dc.subjectPhotodetector
dc.subjectOptoelectronic device
dc.titleUltrafast photoinduced terahertz emission properties of bulk and few layer MOS2
dc.typeThesis

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