Modeling and simulation of bias dependent behavior in GaN HEMT for RF applications

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dc.contributor.authorKaushik, Pragyey Kumar
dc.date.accessioned2025-01-02T06:46:42Z
dc.date.issued2022-10-01
dc.identifier.urihttp://ir.iitd.ac.in/handle/123456789/6197
dc.language.isoen
dc.publisherIIT Delhi
dc.subjectMaterial properties
dc.subjectGaN heterostructure
dc.subjectEpitaxial layers in HEMTs
dc.subjectAluminum mole fraction
dc.subjectParasitic resistance
dc.titleModeling and simulation of bias dependent behavior in GaN HEMT for RF applications
dc.typeThesis

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