Investigation of traps induced reliability issues in GaN high electron mobility transistors

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dc.contributor.authorGupta, Shradha
dc.date.accessioned2025-01-08T11:06:28Z
dc.date.issued2023-07-01
dc.identifier.urihttp://ir.iitd.ac.in/handle/123456789/6425
dc.language.isoen
dc.publisherIIT Delhi
dc.subjectLeakage current
dc.subjectCurrent Collapse
dc.subjectKink effect
dc.subjectMultiphonon ionisation
dc.subjectThermal admittance spectroscopy
dc.titleInvestigation of traps induced reliability issues in GaN high electron mobility transistors
dc.typeThesis

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