Reliability and DC/RF stress induced degradation in InAIGaN/GaN hemts for RF and terahertz applications

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dc.contributor.authorShivansh Awasthi
dc.date.accessioned2026-04-28T04:35:04Z
dc.date.issued2026-03-24
dc.identifier.urihttps://ir.iitd.ac.in/handle/123456789/8135
dc.language.isoen
dc.publisherIIT Delhi
dc.subjectGaN material
dc.subjectElectron gas
dc.subjectThermal
dc.subjectModel calibration
dc.subjectMachine learning
dc.titleReliability and DC/RF stress induced degradation in InAIGaN/GaN hemts for RF and terahertz applications
dc.typeThesis

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