Breakdown and capacitance properties of some two terminal silicon epitaxial device structures

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dc.contributor.authorKumar, Rajendra
dc.date.accessioned2025-02-01T07:20:59Z
dc.date.issued1976
dc.identifier.urihttp://ir.iitd.ac.in/handle/123456789/6773
dc.language.isoen
dc.publisherIIT Delhi
dc.subjectElectronic Devices
dc.titleBreakdown and capacitance properties of some two terminal silicon epitaxial device structures
dc.typeThesis

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