Fabrication and characterization of high-performance deep UV photodetectors using MOCVD-grown ZnGa2O4 epilayers for application under harsh environments

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dc.contributor.authorTaslim Khan
dc.date.accessioned2025-12-10T11:21:45Z
dc.date.issued2025-07-23
dc.identifier.urihttps://ir.iitd.ac.in/handle/123456789/7865
dc.language.isoen
dc.publisherIIT Delhi
dc.subjectPhotodetector
dc.subjectPhotovoltaic detector
dc.subjectPyroelectric phenomena
dc.subjectArtificial synapse
dc.subjectDeep ultraviolet
dc.subjectSingle crystalline
dc.titleFabrication and characterization of high-performance deep UV photodetectors using MOCVD-grown ZnGa2O4 epilayers for application under harsh environments
dc.typeThesis

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