Current gain variability and physical modeling of normal and I2L Bipolar transistors

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dc.contributor.authorJindal ,S.
dc.date.accessioned2025-02-07T09:19:18Z
dc.date.issued1979
dc.identifier.urihttp://ir.iitd.ac.in/handle/123456789/6984
dc.language.isoen
dc.publisherIIT Delhi
dc.subjectElectronic Devices
dc.titleCurrent gain variability and physical modeling of normal and I2L Bipolar transistors
dc.typeThesis

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Department of Electrical Engineering